Using the general expressions of the barrier height for a Schottky barrier diode given by (10.48) and (10.49) to (10.51), with Ds â‰ˆ 1.1 Ã— 1013(1 âˆ’ c2)/c2 states/cm2-eV, where Ds is the interface state density,
(a) What is the barrier height as Ds approaches infinity? Explain the Fermilevel pinning effect under this condition.
(b) If Ds â†’ 0, what is the value of c2 and the expression for Ï†Bn?
(c) If the values of c2, c3, and Ï‡s for Si, GaAs, and GaP Schottky contacts are given by
calculate the values of Ds, qÏ†0, and qÏ†Bn for the above Schottky diodes.