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solution

Using the general expressions of the barrier height for a Schottky barrier diode given by (10.48) and (10.49) to (10.51), with Ds ≈ 1.1 × 1013(1 − c2)/c2 states/cm2-eV, where Ds is the interface state density,

(a) What is the barrier height as Ds approaches infinity? Explain the Fermilevel pinning effect under this condition.

(b) If Ds → 0, what is the value of c2 and the expression for φBn?

(c) If the values of c2, c3, and χs for Si, GaAs, and GaP Schottky contacts are given by

Using the general expressions of the barrier height for a Schottky barrier diode given by (10.48)...-1

calculate the values of Ds, qφ0, and qφBn for the above Schottky diodes.

Using the general expressions of the barrier height for a Schottky barrier diode given by (10.48)...-2

Using the general expressions of the barrier height for a Schottky barrier diode given by (10.48)...-3

Using the general expressions of the barrier height for a Schottky barrier diode given by (10.48)...-4

Solution:

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