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solution

(a) Construct the energy band diagram for a depletion mode (D-) AlGaAs/GaAs modulation doped FET (HEMT) including the spacer layer, and explain how two-dimensional electron gas (2-DEG) is formed in the undoped GaAs layer.

(b) Explain how high electron mobility is achieved in the 2-DEG GaAs layer.

(c) Explain why the transconductance gm and cutoff frequency fT for a HEMT can be much higher than those of MESFETs.

(d) Note that both the depletion (D-) and enhancement (E-) mode GaAs HEMTs can be made, but D-HEMTs are more common. Plot the energy band diagram for an AlGaAs/GaAs E-HEMT when VGS = 0 and VGS > VT.

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